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Si3812DV
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( ? )
0.125 at V GS = 4.5 V
0.200 at V GS = 2.5 V
I D (A)
2.4
1.8
? Halogen-free According to IEC 61249-2-21
Definition
? LITTLE FOOT ? Plus
? 100 % R g Tested
SCHOTTKY PRODUCT SUMMARY
V F (V)
? Compliant to RoHS Directive 2002/95/EC
V KA (V)
20
Diode Forward Voltage
0.48 V at 0.5 A
TSOP-6
Top View
I F (A)
0.5
D
K
A
1
6
K
G
3 mm
S
G
2
3
2.85 mm
5
4
N/C
D
S
A
Ordering Information: Si3812DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Symbol
V DS
V KA
V GS
5s
20
20
± 12
Steady State
Unit
V
V
Continuous Drain Current (T J = 150 °C) (MOSFET) a
T A = 25 °C
T A = 85 °C
I D
2.4
1.7
2.0
1.4
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction) a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
I DM
I S
I F
I FM
1.05
0.5
8
8
0.75
0.5
8
A
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (MOSFET) a
a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 85 °C
T A = 25 °C
T A = 85 °C
P D
T J , T stg
1.15
0.59
1.0
0.52
- 55 to 150
0.83
0.53
0.76
0.48
W
°C
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71069
S11-0651-Rev. G, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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